?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com fdb33N25 rev a fdb33N25 250v n-channel mosfet september 2005 unifet tm fdb33N25 250v n-channel mosfet features ? 33a, 250v, r ds(on) = 0.094 ? @v gs = 10 v low gate charge ( typical 36.8 nc) low c rss ( typical 39 pf) fast switching 100% avalanche tested improved dv/dt capability description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switched mode power supplies and active power factor correction. absolute maximum ratings thermal characteristics { { { z z z { { { z z z s d g g s d symbol parameter fdb33N25 unit v dss drain-source voltage 250 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 33 20.4 a a i dm drain current - pulsed (note 1) 132 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 918 mj i ar avalanche current (note 1) 33 a e ar repetitive avalanche energy (note 1) 23.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 235 1.89 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 0.53 c/w r ja * thermal resistance, junction-to-ambient* -- 40 c/w r ja thermal resistance, junction-to-ambient -- 62.5 c/w * when mounted on the minimum pad size recommended (pcb mount) free datasheet http:///
2 www.fairchildsemi.com fdb33N25 rev a fdb33N25 250v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 1.35mh, i as = 33a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 33a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fdb33N25 fdb33N25tm d2-pak 330mm 24mm 800 symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.25--v/ c i dss zero gate voltage drain current v ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3.0--5.0v r ds(on) static drain-source on-resistance v gs = 10v, i d = 16.5a -- 0.077 0.094 ? g fs forward transconductance v ds = 40v, i d =16.5a (note 4) -- 26.6 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1640 2135 pf c oss output capacitance -- 330 430 pf c rss reverse transfer capacitance -- 39 59 pf switching characteristics t d(on) turn-on delay time v dd = 125v, i d = 33a r g = 25 ? (note 4, 5) -- 35 80 ns t r turn-on rise time -- 230 470 ns t d(off) turn-off delay time -- 75 160 ns t f turn-off fall time -- 120 250 ns q g total gate charge v ds = 200v, i d = 33a v gs = 10v (note 4, 5) -- 36.8 48 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 17 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 33 a i sm maximum pulsed drain-source diode forward current -- -- 132 a v sd drain-source diode forward voltage v gs = 0v, i s = 33a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 33a di f /dt =100a/ s (note 4) -- 220 -- ns q rr reverse recovery charge -- 1.71 -- c free datasheet http:///
3 www.fairchildsemi.com fdb33N25 rev a fdb33N25 250v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 2 4 6 8 10 12 10 0 10 1 10 2 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 0 20406080100 0.00 0.05 0.10 0.15 0.20 0.25 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 10203040 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v note : i d = 33a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] free datasheet http:///
4 www.fairchildsemi.com fdb33N25 rev a fdb33N25 250v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 16.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 0.53 /w max. 2. duty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 free datasheet http:///
5 www.fairchildsemi.com fdb33N25 rev a fdb33N25 250v n-channel mosfet charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms free datasheet http:///
6 www.fairchildsemi.com fdb33N25 rev a fdb33N25 250v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- free datasheet http:///
7 www.fairchildsemi.com fdb33N25 rev a fdb33N25 250v n-channel mosfet mechanical dimensions d2-pak free datasheet http:///
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